Decay of silicon mounds: scaling laws and description with continuum step parameters

The decay of mounds about a dozen layers high on the Si(111)-(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4...

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Veröffentlicht in:Physical review letters 2000-04, Vol.84 (16), p.3662-3665
Hauptverfasser: Ichimiya, A, Hayashi, K, Williams, ED, Einstein, TL, Uwaha, M, Watanabe, K
Format: Artikel
Sprache:eng
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Zusammenfassung:The decay of mounds about a dozen layers high on the Si(111)-(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.84.3662