Decay of silicon mounds: scaling laws and description with continuum step parameters
The decay of mounds about a dozen layers high on the Si(111)-(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4...
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Veröffentlicht in: | Physical review letters 2000-04, Vol.84 (16), p.3662-3665 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The decay of mounds about a dozen layers high on the Si(111)-(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.84.3662 |