Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8 x 2)
Although strongly bound chemisorbates at low coverage readily diffuse on metal surfaces at 300 K, they generally do not diffuse on semiconductor surfaces because of a large corrugation in the adsorbate-surface interaction potential. Chlorine chemisorbed on the Ga-rich GaAs(001)-c(8x2) surface has an...
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Veröffentlicht in: | Physical review letters 2000-08, Vol.85 (7), p.1488-1491 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Although strongly bound chemisorbates at low coverage readily diffuse on metal surfaces at 300 K, they generally do not diffuse on semiconductor surfaces because of a large corrugation in the adsorbate-surface interaction potential. Chlorine chemisorbed on the Ga-rich GaAs(001)-c(8x2) surface has anomalously fast diffusion even though the chemisorption state is tightly bound and highly specific. Simple Hartree-Fock total energy calculations suggest that this diffusion of strongly bound adsorbates can occur at 300 K because there are multiple nearly degenerate adsorbate sites. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.85.1488 |