High-resolution structural study of Bi on Si(001)

High-resolution structural study of Bi on Si(001)

X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1{times}2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption charac...

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Veröffentlicht in:Physical Review, B: Condensed Matter B: Condensed Matter, 1995-08, Vol.52 (8), p.R5515-R5518
Hauptverfasser: Franklin, GE, Tang, S, Woicik, JC, Bedzyk, MJ, Freeman, AJ, Golovchenko, JA
Format: Artikel
Sprache:eng
Schlagworte:
40 CHEMISTRY
ADSORPTION
AMBIENT TEMPERATURE
BISMUTH
BOND LENGTHS
COMPUTERIZED SIMULATION
DIMERS
MATERIALS SCIENCE
SILICON
SORPTIVE PROPERTIES
STANDING WAVES
X-RAY DIFFRACTION
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Zusammenfassung:X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1{times}2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption characteristics of other group-V elements (As and Sb) on Si(001).
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.52.R5515