Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature : the Pb-generation-stress relationship

Bibliographische Detailangaben

Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1993-07, Vol.48 (4), p.2418-2435
1. Verfasser:	STESMANS, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics
Online-Zugang:	Volltext
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