Electrical-transport properties in the semimetallic compound LiGa
The temperature-dependent electrical resistivity above 15 K and the room-temperature Hall coefficient of Li-Ga are presented for five different Li concentrations. The temperature-dependent part of the resistivity is independent of the Li concentration. However, the residual resistivity increases ver...
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Veröffentlicht in: | Phys. Rev. B: Condens. Matter; (United States) 1986-05, Vol.33 (10), p.7291-7293 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The temperature-dependent electrical resistivity above 15 K and the room-temperature Hall coefficient of Li-Ga are presented for five different Li concentrations. The temperature-dependent part of the resistivity is independent of the Li concentration. However, the residual resistivity increases very rapidly with increasing Li concentration. These results suggest that the defects in Li-Ga consist of two types, namely, vacancies on the Li sublattice and Li antisite atoms on the Ga sublattice. An anomaly near 230 K is observed for samples for the Li-deficient phase. This anomaly is associated with the ordering of vacancies on the Li sublattice. Li-Ga is a semimetallic compound with a ''hole'' as the majority carrier. |
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ISSN: | 0163-1829 1095-3795 |
DOI: | 10.1103/physrevb.33.7291 |