Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions
We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (
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| Veröffentlicht in: | Phys. Rev. Lett.; (United States) 1987-04, Vol.58 (16), p.1687-1690 |
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| container_title | Phys. Rev. Lett.; (United States) |
| container_volume | 58 |
| creator | WAKAI, R. T VAN HARLINGEN, D. J |
| description | We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area ( |
| doi_str_mv | 10.1103/PhysRevLett.58.1687 |
| format | Article |
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T ; VAN HARLINGEN, D. J</creator><creatorcontrib>WAKAI, R. T ; VAN HARLINGEN, D. J ; Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</creatorcontrib><description>We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (<0.05 ..mu..m/sup 2/) Josephson junctions. The voltage-bias dependence of the times is consistent with a simple nonequilibrium model in which the bias enhances the rate for electrons to tunnel into the trap from one side of the barrier and exit out the other. Some junctions show clear evidence of interactions between traps, and for certain bias conditions the noise displays predominantly series kinetics.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.58.1687</identifier><identifier>PMID: 10034508</identifier><identifier>CODEN: PRLTAO</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>Applied sciences ; CHARGE STATE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Electronics ; Exact sciences and technology ; JOSEPHSON JUNCTIONS ; JUNCTIONS ; LIFETIME ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Superconducting devices ; SUPERCONDUCTING JUNCTIONS 420201 -- Engineering-- Cryogenic Equipment & Devices ; TRAPS ; TUNNEL EFFECT ; ULTRALOW TEMPERATURE</subject><ispartof>Phys. Rev. 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Some junctions show clear evidence of interactions between traps, and for certain bias conditions the noise displays predominantly series kinetics.</description><subject>Applied sciences</subject><subject>CHARGE STATE</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>JOSEPHSON JUNCTIONS</subject><subject>JUNCTIONS</subject><subject>LIFETIME</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Superconducting devices</subject><subject>SUPERCONDUCTING JUNCTIONS 420201 -- Engineering-- Cryogenic Equipment & Devices</subject><subject>TRAPS</subject><subject>TUNNEL EFFECT</subject><subject>ULTRALOW TEMPERATURE</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNpNkV-L1TAQxYMo7nX1EwhSxAdfes0kTdo-yvqfC4roc0iT6d4sbXrNpMJ-e3PpRfYlCczvzEzOYewl8D0Al-9-HO_pJ_49YM571e1Bd-0jtgPe9nUL0DxmO84l1D3n7RV7RnTHOQehu6fsCkqlUbzbsdsPIaHL1RRGzGHGakZLa8IZY6bKRl-FmDFZl8MSqVrGyh1tukVfeRzPQso2IxWqonWYg0tLrL4thKcjldfdGjflc_ZktBPhi8t9zX5_-vjr5kt9-P756837Q-2k6nPtrLAC-Ohb12tph054K8vaegAPLWpEO2jAwfpBSA_l1MIq3ZSy51qAvGavt74L5WDIhYzu6JYYy65GayWEbAr0doNOafmzImUzB3I4TTbispKBTvVCFJPP_eSGlo8RJRzNKYXZpnsD3JxjMA9iMKoz5xiK6tVlQPEE_QPN5nsB3lwAS85OY7LRBfrPtQp6rRr5D2z8lSE</recordid><startdate>19870420</startdate><enddate>19870420</enddate><creator>WAKAI, R. 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T</creatorcontrib><creatorcontrib>VAN HARLINGEN, D. J</creatorcontrib><creatorcontrib>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Phys. Rev. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WAKAI, R. T</au><au>VAN HARLINGEN, D. J</au><aucorp>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions</atitle><jtitle>Phys. Rev. Lett.; (United States)</jtitle><addtitle>Phys Rev Lett</addtitle><date>1987-04-20</date><risdate>1987</risdate><volume>58</volume><issue>16</issue><spage>1687</spage><epage>1690</epage><pages>1687-1690</pages><issn>0031-9007</issn><eissn>1079-7114</eissn><coden>PRLTAO</coden><abstract>We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (<0.05 ..mu..m/sup 2/) Josephson junctions. The voltage-bias dependence of the times is consistent with a simple nonequilibrium model in which the bias enhances the rate for electrons to tunnel into the trap from one side of the barrier and exit out the other. Some junctions show clear evidence of interactions between traps, and for certain bias conditions the noise displays predominantly series kinetics.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><pmid>10034508</pmid><doi>10.1103/PhysRevLett.58.1687</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0031-9007 |
| ispartof | Phys. Rev. Lett.; (United States), 1987-04, Vol.58 (16), p.1687-1690 |
| issn | 0031-9007 1079-7114 |
| language | eng |
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| source | American Physical Society Journals |
| subjects | Applied sciences CHARGE STATE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Electronics Exact sciences and technology JOSEPHSON JUNCTIONS JUNCTIONS LIFETIME Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices SUPERCONDUCTING JUNCTIONS 420201 -- Engineering-- Cryogenic Equipment & Devices TRAPS TUNNEL EFFECT ULTRALOW TEMPERATURE |
| title | Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions |
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