Direct lifetime measurements and interactions of charged defect states in submicron Josephson junctions

We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (

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Bibliographische Detailangaben
Veröffentlicht in:	Phys. Rev. Lett.; (United States) 1987-04, Vol.58 (16), p.1687-1690
Hauptverfasser:	WAKAI, R. T, VAN HARLINGEN, D. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CHARGE STATE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Electronics Exact sciences and technology JOSEPHSON JUNCTIONS JUNCTIONS LIFETIME Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices SUPERCONDUCTING JUNCTIONS 420201 > Engineering-- Cryogenic Equipment & Devices TRAPS TUNNEL EFFECT ULTRALOW TEMPERATURE
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Beschreibung
Zusammenfassung:	We have measured the emission and capture time of individual electron traps residing within the tunneling barrier of very small-area (
ISSN:	0031-9007 1079-7114
DOI:	10.1103/PhysRevLett.58.1687