Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs

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Bibliographische Detailangaben
Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1993-09, Vol.48 (12), p.8751-8756
Hauptverfasser:	KOZUCH, D. M, STAVOLA, M, SPECTOR, S. J, PEARTON, S. J, LOPATA, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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