Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon layers

Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon layers

Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon films on silicon oxide show that the interfaces are atomically abrupt. The Si 3p valence band is already developed in monolayer-thick islands. The absence of quantum-size effects associated with holes indicates that the Si 3p wav...

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Veröffentlicht in:Phys. Rev. B: Condens. Matter; (United States) 1987-06, Vol.35 (17), p.9395-9398
Hauptverfasser: YANG, L, ABELES, B, EBERHARDT, W, STASIEWSKI, H, SONDERICKER, D
Format: Artikel
Sprache:eng
Schlagworte:
360603 - Materials- Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
Condensed matter: electronic structure, electrical, magnetic, and optical properties
DEPOSITION
Electron and ion emission by liquids and solids
impact phenomena
ELECTRON SPECTROSCOPY
ENERGY LEVELS
Exact sciences and technology
EXCITONS
FUNCTIONS
HYDRIDES
HYDROGEN COMPOUNDS
LAYERS
MATERIALS SCIENCE
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
Photoemission and photoelectron spectra
Physics
QUASI PARTICLES
SILANES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING
THIN FILMS
WAVE FUNCTIONS
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Zusammenfassung:Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon films on silicon oxide show that the interfaces are atomically abrupt. The Si 3p valence band is already developed in monolayer-thick islands. The absence of quantum-size effects associated with holes indicates that the Si 3p wave functions are localized on a scale of a few angstroms. The range of the Si 2p core-hole--exciton interaction is estimated to be 6 A.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.35.9395