Effect of pressure on the electrical resistance of EuO

The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transiti...

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Veröffentlicht in:	Phys. Rev. B: Condens. Matter; (United States) 1987-06, Vol.35 (16), p.8891-8893
Hauptverfasser:	DI MARZIO, D, CROFT, M, SAKAI, N, SHAFER, M. W
Format:	Artikel
Sprache:	eng
Schlagworte:	360204 - Ceramics, Cermets, & Refractories- Physical Properties CHALCOGENIDES Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators DATA ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTRONIC STRUCTURE Electronic transport in condensed matter EUROPIUM COMPOUNDS EUROPIUM OXIDES Exact sciences and technology EXPERIMENTAL DATA INFORMATION LOW TEMPERATURE Low-field transport and mobility piezoresistance MAGNETIC SEMICONDUCTORS MATERIALS MATERIALS SCIENCE MEDIUM TEMPERATURE NUMERICAL DATA OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES Physics PRESSURE DEPENDENCE RARE EARTH COMPOUNDS SEMICONDUCTOR MATERIALS VERY HIGH PRESSURE
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Zusammenfassung:	The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transition temperature is observed to rise rapidly with pressure below 100 kbar but to saturate near 200 K in the 100--250-kbar range.
ISSN:	0163-1829 1095-3795
DOI:	10.1103/physrevb.35.8891