Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

Resistive switching processes in HfO2 are studied by electron holography and in situ energy‐filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It...

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Veröffentlicht in:Advanced materials (Weinheim) 2017-03, Vol.29 (10), p.n/a
Hauptverfasser: Li, Chao, Gao, Bin, Yao, Yuan, Guan, Xiangxiang, Shen, Xi, Wang, Yanguo, Huang, Peng, Liu, Lifeng, Liu, Xiaoyan, Li, Junjie, Gu, Changzhi, Kang, Jinfeng, Yu, Richeng
Format: Artikel
Sprache:eng
Schlagworte:
Electrical resistivity
electron holography
energy‐filtered image
Hafnium oxide
Holography
in situ TEM
Materials science
oxygen vacancies
Random access memory
resistive switching
Switching
Vacancies
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Zusammenfassung:Resistive switching processes in HfO2 are studied by electron holography and in situ energy‐filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201602976