Atomic-Monolayer MoS sub(2) Band-to-Band Tunneling Field-Effect Transistor

Atomic-Monolayer MoS sub(2) Band-to-Band Tunneling Field-Effect Transistor

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS sub(2) as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-11, Vol.12 (41), p.5676-5683
Hauptverfasser: Lan, Yann-Wen, Torres, Carlos M, Tsai, Shin-Hung, Zhu, Xiaodan, Shi, Yumeng, Li, Ming-Yang, Li, Lain-Jong, Yeh, Wen-Kuan, Wang, Kang L
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Efficiency
Field effect transistors
Molybdenum disulfide
Monolayers
Semiconductor devices
Transport
Tunneling
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Beschreibung
Zusammenfassung:The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS sub(2) as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS sub(2), results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201601310