A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing

This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6× reduction in NVM-stres...

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Veröffentlicht in:IEEE journal of solid-state circuits 2016-11, Vol.51 (11), p.2786-2798
Hauptverfasser: Chang, Meng-Fan, Huang, Lie-Yue, Lin, Wen-Zhang, Chiang, Yen-Ning, Kuo, Chia-Chen, Chuang, Ching-Hao, Yang, Keng-Hao, Tsai, Hsiang-Jen, Chen, Tien-Fu, Sheu, Shyh-Shyuan
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Sprache:eng
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Zusammenfassung:This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6× reduction in NVM-stress, a 2× increase in maximum wordlength, and a 2× reduction in search delay. In this paper, we also outline two search schemes, referred to as dynamic source-line pulse controlled (DSL-PC) search and dataline-pulse controlled (DL-PC) search, which were developed specifically for the RCSD-4T2R nvTCAM. We fabricated a 128 × 32 b RCSD-4T2R nvTCAM macro with HfO ReRAM using a 180 nm CMOS process. Using the DSL-PC and DL-PC schemes, the measured search delay of the RCSD-4T2R nvTCAM macro was 1.2 ns under typical VDD.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2016.2602218