A Large-Signal Statistical Model and Yield Estimation of GaN HEMTs Based on Response Surface Methodology

A novel nonlinear large-signal equivalent circuit statistical model of GaN HEMTs based on response surface methodology (RSM) is proposed in this letter. Thirty-four GaN HEMTs from 10 batches are measured and all the parameters in the large-signal equivalent circuit model are extracted by an in-house parameters extraction program. We choose the four most sensitive parameters of the drain-source current model and the gate charge model. The statistical method is modeled by using response surface methodology to change the range of the four parameters. The statistical model is implemented in Agilent-ADS and three S-band GaN HEMT power amplifier are designed by using the established statistical model for validation. The results show that good accuracy has been achieved by comparing measured and simulated output power (Pout) and power added efficiency (PAE). This method is simple and accurate for GaN HEMT power amplifier design and yield estimation.