Diamond epitaxy: Basics and applications
Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vap...
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Veröffentlicht in: | Progress in crystal growth and characterization of materials 2016-06, Vol.62 (2), p.317-328 |
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description | Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods, are described. Next, current understanding of defects such as dislocations and stacking faults is described. Further, for the future electronic applications, the present status of wafer technology and impurity doping are described. Finally, the electronic devices made of diamond semiconductors are shown. |
doi_str_mv | 10.1016/j.pcrysgrow.2016.04.017 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1855356845</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0960897416300201</els_id><sourcerecordid>1855356845</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-f5235b8458c5f988cfa079fc426d259b9fa460e5a4ee24cf6ae853c96a68c1213</originalsourceid><addsrcrecordid>eNqFkEtPwzAQhC0EEuXxG-ixlwTbsR2HWylPqRIXOFvuZo1cpXGwU6D_HldFXDmtNPpmVjOEXDFaMsrU9bocIO7SewxfJc9CSUVJWX1EJkzXuhCc6mMyoY2ihW5qcUrOUlrTTDBZTcjszttN6NspDn6037ub6a1NHtLUZs0OQ-fBjj706YKcONslvPy95-Tt4f518VQsXx6fF_NlAZXQY-Ekr-RKC6lBukZrcJbWjQPBVctls2qcFYqitAKRC3DKopYVNMoqDYyz6pzMDrlDDB9bTKPZ-ATYdbbHsE2GaSkrqfKHjNYHFGJIKaIzQ_QbG3eGUbPfxqzN3zZmv42hwuTm2Tk_ODE3-fQYTQKPPWDrI8Jo2uD_zfgBXmxxLQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1855356845</pqid></control><display><type>article</type><title>Diamond epitaxy: Basics and applications</title><source>Elsevier ScienceDirect Journals</source><creator>Kasu, Makoto</creator><creatorcontrib>Kasu, Makoto</creatorcontrib><description>Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods, are described. Next, current understanding of defects such as dislocations and stacking faults is described. Further, for the future electronic applications, the present status of wafer technology and impurity doping are described. Finally, the electronic devices made of diamond semiconductors are shown.</description><identifier>ISSN: 0960-8974</identifier><identifier>EISSN: 1878-4208</identifier><identifier>DOI: 10.1016/j.pcrysgrow.2016.04.017</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Chemical vapor deposition ; Crystal defects ; Crystal growth ; defect ; diamond ; Diamond machining ; Diamond tools ; electronic device ; Electronic devices ; Electronics ; growth principle ; Semiconductors</subject><ispartof>Progress in crystal growth and characterization of materials, 2016-06, Vol.62 (2), p.317-328</ispartof><rights>2016 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-f5235b8458c5f988cfa079fc426d259b9fa460e5a4ee24cf6ae853c96a68c1213</citedby><cites>FETCH-LOGICAL-c348t-f5235b8458c5f988cfa079fc426d259b9fa460e5a4ee24cf6ae853c96a68c1213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0960897416300201$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Kasu, Makoto</creatorcontrib><title>Diamond epitaxy: Basics and applications</title><title>Progress in crystal growth and characterization of materials</title><description>Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods, are described. Next, current understanding of defects such as dislocations and stacking faults is described. Further, for the future electronic applications, the present status of wafer technology and impurity doping are described. Finally, the electronic devices made of diamond semiconductors are shown.</description><subject>Chemical vapor deposition</subject><subject>Crystal defects</subject><subject>Crystal growth</subject><subject>defect</subject><subject>diamond</subject><subject>Diamond machining</subject><subject>Diamond tools</subject><subject>electronic device</subject><subject>Electronic devices</subject><subject>Electronics</subject><subject>growth principle</subject><subject>Semiconductors</subject><issn>0960-8974</issn><issn>1878-4208</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhC0EEuXxG-ixlwTbsR2HWylPqRIXOFvuZo1cpXGwU6D_HldFXDmtNPpmVjOEXDFaMsrU9bocIO7SewxfJc9CSUVJWX1EJkzXuhCc6mMyoY2ihW5qcUrOUlrTTDBZTcjszttN6NspDn6037ub6a1NHtLUZs0OQ-fBjj706YKcONslvPy95-Tt4f518VQsXx6fF_NlAZXQY-Ekr-RKC6lBukZrcJbWjQPBVctls2qcFYqitAKRC3DKopYVNMoqDYyz6pzMDrlDDB9bTKPZ-ATYdbbHsE2GaSkrqfKHjNYHFGJIKaIzQ_QbG3eGUbPfxqzN3zZmv42hwuTm2Tk_ODE3-fQYTQKPPWDrI8Jo2uD_zfgBXmxxLQ</recordid><startdate>201606</startdate><enddate>201606</enddate><creator>Kasu, Makoto</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201606</creationdate><title>Diamond epitaxy: Basics and applications</title><author>Kasu, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-f5235b8458c5f988cfa079fc426d259b9fa460e5a4ee24cf6ae853c96a68c1213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Chemical vapor deposition</topic><topic>Crystal defects</topic><topic>Crystal growth</topic><topic>defect</topic><topic>diamond</topic><topic>Diamond machining</topic><topic>Diamond tools</topic><topic>electronic device</topic><topic>Electronic devices</topic><topic>Electronics</topic><topic>growth principle</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kasu, Makoto</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Progress in crystal growth and characterization of materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kasu, Makoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond epitaxy: Basics and applications</atitle><jtitle>Progress in crystal growth and characterization of materials</jtitle><date>2016-06</date><risdate>2016</risdate><volume>62</volume><issue>2</issue><spage>317</spage><epage>328</epage><pages>317-328</pages><issn>0960-8974</issn><eissn>1878-4208</eissn><abstract>Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods, are described. Next, current understanding of defects such as dislocations and stacking faults is described. Further, for the future electronic applications, the present status of wafer technology and impurity doping are described. Finally, the electronic devices made of diamond semiconductors are shown.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.pcrysgrow.2016.04.017</doi><tpages>12</tpages></addata></record> |
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subjects | Chemical vapor deposition Crystal defects Crystal growth defect diamond Diamond machining Diamond tools electronic device Electronic devices Electronics growth principle Semiconductors |
title | Diamond epitaxy: Basics and applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T21%3A27%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Diamond%20epitaxy:%20Basics%20and%20applications&rft.jtitle=Progress%20in%20crystal%20growth%20and%20characterization%20of%20materials&rft.au=Kasu,%20Makoto&rft.date=2016-06&rft.volume=62&rft.issue=2&rft.spage=317&rft.epage=328&rft.pages=317-328&rft.issn=0960-8974&rft.eissn=1878-4208&rft_id=info:doi/10.1016/j.pcrysgrow.2016.04.017&rft_dat=%3Cproquest_cross%3E1855356845%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1855356845&rft_id=info:pmid/&rft_els_id=S0960897416300201&rfr_iscdi=true |