Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

High mobility graphene field‐effect devices, fabricated on the complex‐oxide heterostructure LaAlO3/SrTiO3, exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short‐range and phonon contributions to scattering. The ab...

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Veröffentlicht in:Advanced materials (Weinheim) 2017-03, Vol.29 (9), p.n/a
Hauptverfasser: Jnawali, Giriraj, Huang, Mengchen, Hsu, Jen‐Feng, Lee, Hyungwoo, Lee, Jung‐Woo, Irvin, Patrick, Eom, Chang‐Beom, D'Urso, Brian, Levy, Jeremy
Format: Artikel
Sprache:eng
Schlagworte:
Coherent scattering
complex‐oxides
Graphene
Heterostructures
Interference
pseudospin
quantum interference
Quantum phenomena
Quantum transport
Room temperature
Signatures
Strontium titanates
weak antilocalization
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Zusammenfassung:High mobility graphene field‐effect devices, fabricated on the complex‐oxide heterostructure LaAlO3/SrTiO3, exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short‐range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603488