Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ...

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Veröffentlicht in:ACS applied materials & interfaces 2017-01, Vol.9 (1), p.17-21
Hauptverfasser: Reddy, Pulikanti Guruprasad, Pal, Satyendra Prakash, Kumar, Pawan, Pradeep, Chullikkattil P, Ghosh, Subrata, Sharma, Satinder K, Gonsalves, Kenneth E
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Sprache:eng
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Zusammenfassung:The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b10384