Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, opto­electronics, and photonics. Atomically precise GNRs can be “bottom-up” synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditio...

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Veröffentlicht in:Journal of the American Chemical Society 2016-11, Vol.138 (47), p.15488-15496
Hauptverfasser: Chen, Zongping, Zhang, Wen, Palma, Carlos-Andres, Lodi Rizzini, Alberto, Liu, Bilu, Abbas, Ahmad, Richter, Nils, Martini, Leonardo, Wang, Xiao-Ye, Cavani, Nicola, Lu, Hao, Mishra, Neeraj, Coletti, Camilla, Berger, Reinhard, Klappenberger, Florian, Kläui, Mathias, Candini, Andrea, Affronte, Marco, Zhou, Chongwu, De Renzi, Valentina, del Pennino, Umberto, Barth, Johannes V, Räder, Hans Joachim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus
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Sprache:eng
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Zusammenfassung:Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, opto­electronics, and photonics. Atomically precise GNRs can be “bottom-up” synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient “bottom-up” chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the hetero­atom doping and hetero­junctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.
ISSN:0002-7863
1520-5126
DOI:10.1021/jacs.6b10374