Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes

Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes

Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr−1 m−2 at a current de...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-09, Vol.28 (36), p.8029-8036
Hauptverfasser: Hong, Wei-Li, Huang, Yu-Chi, Chang, Che-Yu, Zhang, Zhi-Chao, Tsai, Huai-Ren, Chang, Ning-Yi, Chao, Yu-Chiang
Format: Artikel
Sprache:eng
Schlagworte:
Cracks
Devices
electroluminescence
Grain boundaries
Infrared
Lead free
Light-emitting diodes
Perovskites
Radiance
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Beschreibung
Zusammenfassung:Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr−1 m−2 at a current density of 364.3 mA cm−2 and maximum external quantum efficiency of 3.8% at 4.5 V.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601024