Ternary semiconductors NiZrSn and CoZrBi with half-Heusler structure: A first-principles study

The ternary semiconductors NiZrSn and CoZrBi with C 1 sub(b) crystal structure are introduced by calculating their basic structural, electronic, and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (E sub(g)=0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials ABC, the intrinsic point defects introduced by species A(Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Ni sub(i)) as well as the V sub(Ni) Ni sub(i) complex introduce defect states in the band gap, whereas the Ni vacancy (V sub(Ni)) only reduces the size of the band gap. While Ni sub(i) is electrically active and may act as a donor, the other two types of defects may compensate extrinsic doping. In CoZrBi, only the V sub(Co) Co sub(i) complex introduces a defect state in the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials, both in the p-type and the n-type regimes, is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 mu V/K when p doped, whereas NiZrSn possesses its maximum thermopower in the n-type regime. The reported difficulties in achieving p-type doping in NiZrSn could be rationalized by the unintended formation of (ProQuest: Formulae and/or non-USASCII text omitted) in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T=600 K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni sub(2) ZrSn phase.