High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Quasi‐2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high‐output‐power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron‐b...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-09, Vol.28 (36), p.7978-7983
Hauptverfasser: Rong, Xin, Wang, Xinqiang, Ivanov, Sergey V., Jiang, Xinhe, Chen, Guang, Wang, Ping, Wang, Weiying, He, Chenguang, Wang, Tao, Schulz, Tobias, Albrecht, Martin, Jmerik, Valentin N., Toropov, Alexey A., Ratnikov, Viacheslav V., Kozlovsky, Vladimir I., Martovitsky, Victor P., Jin, Peng, Xu, Fujun, Yang, Xuelin, Qin, Zhixin, Ge, Weikun, Shi, Junjie, Shen, Bo
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Devices
e-beam pumping
Excitation
high output power
Light sources
mid-UV light sources
Molecular beam epitaxy
Molecular structure
quasi-2D GaN
Sterilization
Ultraviolet
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Zusammenfassung:Quasi‐2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high‐output‐power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron‐beam excitation. This device is promising and competitive in non‐line‐of‐sight communications or the sterilization field.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201600990