Pressure induced directional transformations on close spaced vapor transport deposited SnS thin films

In this work, SnS thin films were deposited by employing the Close Spaced Vapor Transport (CSVT) technique under air atmosphere. Single-phase, p-type SnS thin films were synthesized by varying the final pressure in the chamber and its effect on the properties of SnS were studied. The pressure impact on the directional preferred orientation (DPO) of grains is presented for the first time. The analysis of different pressure values on deposited film properties was performed by X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, optical measurements and electric characterization techniques. [Display omitted] •SnS thin films are grown by Close Spaced Vapor Transport technique under chamber pressures of 1.99 - 4.66Pa.•The selectivity on the chamber pressure induces different preferential orientations on the deposited SnS crystals.•SnS resistivity values are increased until 105Ω cm with increasing of chamber deposition pressure to 4.66Pa.•The impact of chamber pressure on SnS structural, morphological, electrical and optical properties is discussed.