Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

The recombination parameters of aluminium–oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several n‐ and p‐type intentionally Al‐contaminated and control samples, using a single‐level defect model. The presence of the control samples has allowed greater accuracy...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2016-10, Vol.253 (10), p.2079-2084
Hauptverfasser:	Sun, Chang, Rougieux, Fiacre E., Degoulange, Julien, Einhaus, Roland, Macdonald, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminium Aluminum charge carrier lifetimes charge carrier recombination defect complexes Fittings lifetime spectroscopy Mathematical models oxygen Parameter uncertainty Parameters Silicon Solid state physics Uncertainty
Online-Zugang:	Volltext
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