Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

The recombination parameters of aluminium–oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several n‐ and p‐type intentionally Al‐contaminated and control samples, using a single‐level defect model. The presence of the control samples has allowed greater accuracy for the extraction of the recombination lifetime. The uncertainty ranges of the parameters have been tightened significantly by simultaneously fitting the lifetime on several samples. The electron/hole capture cross section ratio k was reassessed to be 380, in the uncertainty range of 330–460. A direct comparison of the n‐ and p‐type samples has shown that those complexes are much more recombination‐active in p‐type silicon than in n‐type silicon at low and intermediate injection levels.