Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS sub(2) Heterostructure

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS sub(2) Heterostructure

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS sub(2) heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa super(-1) as a function of applied hydrostatic p...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-08, Vol.12 (30), p.4063-4069
Hauptverfasser: Pandey, Tribhuwan, Nayak, Avinash P, Liu, Jin, Moran, Samuel T, Kim, Joon-Seok, Li, Lain-Jong, Lin, Jung-Fu, Akinwande, Deji, Singh, Abhishek K
Format: Artikel
Sprache:eng
Schlagworte:
Charge transfer
Doping
Fermi level
Graphene
Heterostructures
Hydrostatic pressure
Molybdenum disulfide
Monolayers
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Zusammenfassung:A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS sub(2) heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa super(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I sub(2D)/I sub(G) measurements.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201600808