Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light‐emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro‐LED arrays ar...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-09, Vol.28 (35), p.7688-7694
Hauptverfasser: Chung, Kunook, Yoo, Hyobin, Hyun, Jerome K., Oh, Hongseok, Tchoe, Youngbin, Lee, Keundong, Baek, Hyeonjun, Kim, Miyoung, Yi, Gyu‐Chul
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Sprache:eng
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Zusammenfassung:The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light‐emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro‐LED arrays are transferred onto Cu foil by a simple lift‐off technique, which works reliably under various bending conditions.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601894