The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method
Sc-doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3)(NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO sub(3)[100] (Nb:STO) single crystal substrate via an aqueous sol-gel method. Structure analysis by x-ray diffraction and high resolution transmissi...
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| Veröffentlicht in: | Key Engineering Materials 2016-07, Vol.697, p.235-238 |
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| creator | Wu, Yun Yi Wang, Xiao Hui Zhong, Cai Fu Li, Long Tu |
| description | Sc-doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3)(NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO sub(3)[100] (Nb:STO) single crystal substrate via an aqueous sol-gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 [mu]C/cm super(2) and typical butterfly shape displacement-voltage loop with effective piezoelectric coefficient d sub(33)* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.697.235 |
| format | Article |
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Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 [mu]C/cm super(2) and typical butterfly shape displacement-voltage loop with effective piezoelectric coefficient d sub(33)* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISBN: 9783035710656</identifier><identifier>ISBN: 3035710651</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.697.235</identifier><language>eng</language><subject>Butterflies ; Epitaxial growth ; Ferroelectric materials ; Ferroelectricity ; Sol gel process ; Substrates ; Thin films ; Titanium dioxide</subject><ispartof>Key Engineering Materials, 2016-07, Vol.697, p.235-238</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27902,27903</link.rule.ids></links><search><creatorcontrib>Wu, Yun Yi</creatorcontrib><creatorcontrib>Wang, Xiao Hui</creatorcontrib><creatorcontrib>Zhong, Cai Fu</creatorcontrib><creatorcontrib>Li, Long Tu</creatorcontrib><title>The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method</title><title>Key Engineering Materials</title><description>Sc-doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3)(NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO sub(3)[100] (Nb:STO) single crystal substrate via an aqueous sol-gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 [mu]C/cm super(2) and typical butterfly shape displacement-voltage loop with effective piezoelectric coefficient d sub(33)* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.</description><subject>Butterflies</subject><subject>Epitaxial growth</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Sol gel process</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><issn>1013-9826</issn><issn>1662-9795</issn><isbn>9783035710656</isbn><isbn>3035710651</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVjctOwzAQRS0eEgX6D16hZBHXjrGTbIG0SFUBqdlXaTpRjNw4xI4Cn8OfYpVIrFmdM_eOZhC6Y5Tc0zhdjONIbKWgdapWFWnBLdb5hsgsITEXZ2jGpIyjLMnEOZpnScopFwmjUsgL31HGoyyN5RW6tvadUs5SJmbou2gA5xoq16uq1PitNx30ToHFpsZ5p1z5qXy-6s3Y4m0VPfn-gIOXEtthH1ASnpj-QoR4PeVMhOGkPn1Qf16o19PAvTaqxUulj_4vdGXvL--_8NboaAUab8A15nCLLutSW5hPvEHBMi8en6OuNx8DWLc7KluB1mULZrA7lnIhGZeU83-s_gBDTWes</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Wu, Yun Yi</creator><creator>Wang, Xiao Hui</creator><creator>Zhong, Cai Fu</creator><creator>Li, Long Tu</creator><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20160701</creationdate><title>The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method</title><author>Wu, Yun Yi ; Wang, Xiao Hui ; Zhong, Cai Fu ; Li, Long Tu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_18356136033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Butterflies</topic><topic>Epitaxial growth</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Sol gel process</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Yun Yi</creatorcontrib><creatorcontrib>Wang, Xiao Hui</creatorcontrib><creatorcontrib>Zhong, Cai Fu</creatorcontrib><creatorcontrib>Li, Long Tu</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>Key Engineering Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Yun Yi</au><au>Wang, Xiao Hui</au><au>Zhong, Cai Fu</au><au>Li, Long Tu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method</atitle><jtitle>Key Engineering Materials</jtitle><date>2016-07-01</date><risdate>2016</risdate><volume>697</volume><spage>235</spage><epage>238</epage><pages>235-238</pages><issn>1013-9826</issn><eissn>1662-9795</eissn><isbn>9783035710656</isbn><isbn>3035710651</isbn><abstract>Sc-doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3)(NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO sub(3)[100] (Nb:STO) single crystal substrate via an aqueous sol-gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 [mu]C/cm super(2) and typical butterfly shape displacement-voltage loop with effective piezoelectric coefficient d sub(33)* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.</abstract><doi>10.4028/www.scientific.net/KEM.697.235</doi></addata></record> |
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| subjects | Butterflies Epitaxial growth Ferroelectric materials Ferroelectricity Sol gel process Substrates Thin films Titanium dioxide |
| title | The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method |
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