The Electrical Properties of Epitaxial Grown Sc-Doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3) Thin Film Prepared by Sol-Gel Method

Sc-doped (Na sub(0.) sub(8) sub(5) K sub(0.15)) sub(0.5) Bi sub(0.5) TiO sub(3)(NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO sub(3)[100] (Nb:STO) single crystal substrate via an aqueous sol-gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 [mu]C/cm super(2) and typical butterfly shape displacement-voltage loop with effective piezoelectric coefficient d sub(33)* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.