Growth and properties of self-catalyzed (In,Mn)As nanowires

Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) (In,Mn)As nanowires with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated nanowires or on their side‐walls, were grown using Mn‐assisted molecular‐beam epitaxy at relatively high temperature range. At the same time, the growth processes of the nanowires were accompanied by the formation of MnAs precipitates between the nanowires at the interface of the wetting layer.