Fabrication and characterization of Au/Zn composite electrode on p-CdZnTe (111) B plane

Electrode fabrication is a key procedure for preparation of high‐performance CdZnTe detectors, and the metal–semiconductor contact contributes greatly to the performance of detectors. In the present paper, a vacuum evaporation method was used to deposit a Au/Zn composite electrode on the (111) plane of p‐CdZnTe. Based on the AFM, SEM, current–voltage testing and the barrier‐height calculations, the effects of an Au/Zn contact on CdZnTe detector properties were investigated. The results showed that a lower Schottky barrier height was attained by depositing a Au layer on p‐CdZnTe(111) A plane and a Au/Zn double layers on (111) B plane, decreasing the influence of the Te‐enriched surface on the metal–semiconductor contact, and suggesting a better ohmic contact for CdZnTe detectors. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)