Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet

Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet

A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large‐scale, complex electronic circuits with 1 μm resolution. The prepared organic thin‐film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm2 V−1 s−1 in t...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-08, Vol.28 (31), p.6568-6573
Hauptverfasser: Liu, Xuying, Kanehara, Masayuki, Liu, Chuan, Sakamoto, Kenji, Yasuda, Takeshi, Takeya, Jun, Minari, Takeo
Format: Artikel
Sprache:eng
Schlagworte:
Au nanoparticle ink
Channels
Contact resistance
Electronic circuits
Electronics
organic thin-film transistors
parallel vacuum ultraviolet
Patterning
Spontaneous
Thin film transistors
Ultraviolet
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Zusammenfassung:A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large‐scale, complex electronic circuits with 1 μm resolution. The prepared organic thin‐film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm2 V−1 s−1 in the devices with channel lengths of 1 and 5 μm, respectively.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201506151