Evolution of thermal conductivity of In sub(3)Sb sub( beta ) Te sub( gamma ) thin films up to 550 degree C

The temperature dependent thermal conductivity of In-Sb-Te thin films has been measured by modulated photothermal radiometry in the 20-550 degree C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb sub(0.8)Te sub(0.2)and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 degree C. Further increase in temperature above 460 degree C leads, for higher Te content in the alloy, to the formation of crystalline In sub(3)SbTe sub(2), intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb sub(0.8)Te sub(0.2)phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. ( copyright 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) The thermal conductivity of In-Sb-Te alloy with poor and rich Te content is measured in the 20-500 degree C range. The analysis of the results is supported by in-situ Raman measurements.