Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation

Suppressing the oppositely orientated hexagonal boron nitride (h‐BN) domains during the growth is of great challenge due to its bipolar structure. It is found that h‐BN domains grown on onefold symmetric Cu(102) or (103) share a unique orientation, with one zigzag edge of the h‐BN triangles perpendi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-07, Vol.12 (27), p.3645-3650
Hauptverfasser: Li, Jidong, Li, Yao, Yin, Jun, Ren, Xibiao, Liu, Xiaofei, Jin, Chuanhong, Guo, Wanlin
Format: Artikel
Sprache:eng
Schlagworte:
Boron nitride
chemical vapor deposition
Copper
Cu substrate
growth orientation
hexagonal boron nitride
Monolayers
Nanotechnology
Orientation
Retarding
Silicones
Substrates
Symmetry
Triangles
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Suppressing the oppositely orientated hexagonal boron nitride (h‐BN) domains during the growth is of great challenge due to its bipolar structure. It is found that h‐BN domains grown on onefold symmetric Cu(102) or (103) share a unique orientation, with one zigzag edge of the h‐BN triangles perpendicular to the symmetry axis of the substrate surface.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201600681