A room temperature light source based on silicon nanowires
We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walle...
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Veröffentlicht in: | Thin solid films 2016-08, Vol.613, p.59-63 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walled carbon nanotube (CNT) suspension was prepared and dispersed in Si NW samples. The hybrid Si NW/CNT system exhibits a double emission at room temperature, both in the visible (due to Si NWs) and the IR (due to CNTs) range, thus demonstrating the realization of a low-cost material with promising perspectives for applications in Si-based photonics.
•Synthesis of ultrathin Si nanowires (NWs) by metal-assisted chemical etching•Synthesis of NW/carbon nanotube (CNT) hybrid systems•Structural characterization of Si NWs and Si NW/CNT•Room temperature photoluminescence (PL) properties of Si NWs and of Si NW/CNT•Tuning of the PL properties of the Si NW/CNT hybrid system |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2015.11.028 |