Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Strain‐gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal‐MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic‐layer‐thick phototransi...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-10, Vol.28 (38), p.8463-8468
Hauptverfasser: Wu, Wenzhuo, Wang, Lei, Yu, Ruomeng, Liu, Yuanyue, Wei, Su-Huai, Hone, James, Wang, Zhong Lin
Format: Artikel
Sprache:eng
Schlagworte:
adaptive optoelectronics
monolayer MoS2
piezophototronic effect
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Zusammenfassung:Strain‐gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal‐MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic‐layer‐thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201602854