Field-Induced Single-Ion Magnetism Based on Spin-Phonon Relaxation in a Distorted Octahedral High-Spin Cobalt(II) Complex

Invited for the cover of this issue is the group of Ryuta Ishikawa at Fukuoka University, Japan, collaborating with the group of Masahiro Yamashita at Tohoku University, Japan. The cover image shows a schematic representation of possible slow magnetic relaxation pathways (a two‐phonon Raman process and a direct phonon bottleneck process) in a distorted octahedral high‐spin CoII SIM with positive zero‐field splitting. These compounds will have important technological applications, such as ultra‐high‐density information storage, quantum computation, and molecular spintronic devices… Read more about the story behind the cover in the Cover Profile and about the research itself on p. 3233 ff.