Overgrowth of diamond layers on diamond microneedles: New concept for freestanding diamond substrate by heteroepitaxy
A new concept for producing freestanding diamond substrate by heteroepitaxy is proposed. Thick diamond growth by heteroepitaxy is often prevented by heteroepitaxial-strain-related substrate bowing as it leads to substrate cracking. The possibility of using diamond microneedles as a mechanism to negl...
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Veröffentlicht in: | Diamond and related materials 2016-06, Vol.66, p.77-82 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new concept for producing freestanding diamond substrate by heteroepitaxy is proposed. Thick diamond growth by heteroepitaxy is often prevented by heteroepitaxial-strain-related substrate bowing as it leads to substrate cracking. The possibility of using diamond microneedles as a mechanism to neglect and/or exploit substrate bowing is discussed in this new concept; the self-breaking effect of the microneedles is proposed as an application to prevent the main bulk diamond layers from cracking. With an aim toward the realization of this concept, the present study shows the first two important experimental verifications through a homoepitaxial experiment with a high-pressure high-temperature diamond substrate: (1) fabrication of high-aspect-ratio diamond microneedles (2 and 100μm in diameter and length, respectively) by a thermo-chemical etching reaction and (2) overgrowth of diamond on the microneedles with air gaps remaining between microneedles after continuous diamond film overgrowth. We also detail a growth scheme that illustrates how continuous diamond films are created from the microneedles. The strong feasibility for applying the concept in actual heteroepitaxy is suggested through the present study.
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•New concept for heteroepitaxial diamond substrate was proposed.•Fabrication of high-aspect-ratio diamond microneedles was demonstrated.•Air gaps remained between microneedles after overgrowth of diamond on microneedles. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2016.03.019 |