Device simulation of CH sub(3)NH sub(3)PbI sub(3 ) perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n-type a-Si:H/p-type mu c-Si sub(1-x)O sub(x):H tunnel junction

We investigate perovskite/heterojunction crystalline silicon monolithic tandem solar cells by using device simulation. A hydrogenated amorphous and microcrystalline silicon-based tunnel recombination junction is applied to the tandem solar cells. The influence of the conduction and valence band offset between the n-type layer of the perovskite top cell and the tunnel recombination junction was investigated. To obtain excellent solar cell performance, the conduction band offset should be 0-0.6eV, although the valence band offset does not affect the solar cell performance. We also found that higher fill factor is expected when the n-type layer of the perovskite top cell is located on the tunnel recombination junction compared with the structure in which the hole conductor is located on the tunnel recombination junction.