Dickson charge pump using integrated inductors in complementary metal–oxide semiconductor technology

A fully integrated DC/DC converter for low-voltage applications is presented. It is based on a modified Dickson charge pump which exhibits improved performances by using integrated small inductors. The proposed charge pump is superior in terms of power efficiency, maximum output voltage, rise time,...

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Veröffentlicht in:	IET power electronics 2016-03, Vol.9 (3), p.553-558
Hauptverfasser:	Zucchelli, Massimiliano, Colalongo, Luigi, Richelli, Anna, Kovacs-Vajna, Zsolt M
Format:	Artikel
Sprache:	eng
Schlagworte:	charge pump circuits Charge pumps CMOS integrated circuits complementary metal oxide semiconductor technology Converters DC‐DC converter DC‐DC power convertors Dickson charge pump Electric potential Inductors integrated inductor low‐voltage application Metal oxide semiconductors Metal oxides power efficiency Semiconductors size 180 nm STMicroelectronics process Voltage voltage output ripple
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Beschreibung
Zusammenfassung:	A fully integrated DC/DC converter for low-voltage applications is presented. It is based on a modified Dickson charge pump which exhibits improved performances by using integrated small inductors. The proposed charge pump is superior in terms of power efficiency, maximum output voltage, rise time, and voltage output ripple. The overall circuit does not require any external components and can be fully integrated in a standard complementary metal–oxide semiconductor technology. The converter has been designed in STMicroelectronics 180 nm process.
ISSN:	1755-4535 1755-4543 1755-4543
DOI:	10.1049/iet-pel.2014.0799