Magnetism of aniline modified graphene-based materials

The possibility of producing magnetic graphene nanostructures by functionalization with aromatic radicals has been investigated. Functionalization of graphene basal plane was performed with three types of anilines: 4-bromoaniline, 4-nitroaniline and 4-chloroaniline. The samples were examined by comp...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2016-10, Vol.415, p.45-50
Hauptverfasser: Komlev, A.A., Makarova, T.L., Lahderanta, E., Semenikhin, P.V., Veinger, A.I., Tisnek, T.V., Magnani, G., Bertoni, G., Pontiroli, D., Ricco, M.
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Sprache:eng
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Zusammenfassung:The possibility of producing magnetic graphene nanostructures by functionalization with aromatic radicals has been investigated. Functionalization of graphene basal plane was performed with three types of anilines: 4-bromoaniline, 4-nitroaniline and 4-chloroaniline. The samples were examined by composition analysis with energy-dispersive X-ray spectroscopy and magnetic measurements by SQUID magnetometry and electron paramagnetic resonance. Initial graphene was produced by thermal exfoliation. Both pristine and functionalized samples demonstrate strong paramagnetic contribution at low temperatures, which originates from intrinsic defects. Attachment of an organic molecule with the formation of a covalent bond with carbon atom on the basal plane generates a delocalized spin in the graphene π – electron system. Nitroaniline proved to be the most suitable and sufficiently reactive to attach to the basal plane carbon atoms in large amounts. Functionalization of graphene with nitroaniline resulted in appearance both ferromagnetic and antiferromagnetic features with a clear antiferromagnetic transition near 120K. •Graphene was produced and functionalized by chloro-, bromo- and nitroaniline.•Nitroaniline was found to be the most suitable compound for functionalization.•Both SQUID and EPR revealed a carbon-related antiferromagnetic transition near 120 K.•Antiferomagnetic interactions are attributed to the extended defects on basal plane.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2015.11.053