Threshold voltage of nanoscale si gate-all-around MOSFET: Short-channel, quantum, and Volume Effects

Threshold voltage of nanoscale si gate-all-around MOSFET: Short-channel, quantum, and Volume Effects

The threshold voltage (V T ) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting V T into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical p...

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Bibliographische Detailangaben
Hauptverfasser: Sun, Min-Chul, Woo Kim, Hyun, Wan Kim, Sang, Han Lee, Jung, Kim, Hyungjin, Park, Byung-Gook
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breaking down
Channels
Conferences
Doping
field-effect transistor
gate-all-around
Logic gates
Mathematical analysis
Mathematical model
MOSFET circuits
MOSFETs
Nanoelectronics
quantum effect
Quantum mechanics
Semiconductor device modeling
Semiconductor process modeling
short-channel effect
Threshold voltage
volume effect
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Beschreibung
Zusammenfassung:The threshold voltage (V T ) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting V T into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control V T of a GAA MOSFET, which influences on short-channel effect, quantum confinement effect and other effects.
ISSN:2159-3523
2159-3523
DOI:10.1109/INEC.2013.6465943