An analysis of the impact of native oxide, surface contamination and material density on total electron yield in the absence of surface charging effects

[Display omitted] •Total electron yields were assessed in the absence of any surface charging effect.•Experimental and simulation results showed a low native oxide energy barrier.•The yield enhancement effect of a native oxide layer was confirmed.•The yield enhancement effect of a thin surface contamination layer was confirmed.•Deviations in the material density from the theoretical values were evaluated. The effects of the presence of a native oxide film or surface contamination as well as variations in material density on the total electron yield (TEY) of Ru and B4C were assessed in the absence of any surface charging effect. The experimental results were analyzed using semi-empirical Monte Carlo simulations and demonstrated that a native oxide film increased the TEY, and that this effect varied with film thickness. These phenomena were explained based on the effect of the backscattered electrons (BSEs) at the interface between Ru and RuO2, as well as the lower potential barrier of RuO2. Deviations in the material density from the theoretical values were attributed to the film deposition procedure based on fitting simulated TEY curves to experimental results. In the case of B4C, the TEY was enhanced by the presence of a 0.8-nm-thick surface contamination film consisting of oxygenated hydrocarbons. The effect of the low potential barrier of the contamination film was found to be significant, as the density of the B4C was much lower than that of the Ru. Comparing the simulation parameters generated in the present work with Joy’s database, it was found that the model and the input parameters used in the simulations were sufficiently accurate.