High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Triple‐junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal‐organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4‐inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high‐efficiency tandem solar cells with three or more junctions. Copyright © 2016 John Wiley & Sons, Ltd. Triple‐junction GaInP/GaAs/GaInNAs solar cells with an efficiency of ~29% at AM0 are demonstrated using a combined molecular beam epitaxy–metal‐organic chemical vapor deposition technique. The presented method enables fabrication of solar cells with efficiency approaching 30% or even above and opens a new perspective for fabrication of dilute nitride optoelectronic devices.