Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits

In this work, a complementary InAs/Al 0.05 Ga 0.95 Sb tunnel field-effect-transistor (TFET) virtual technology platform is benchmarked against the projection to the CMOS FinFET 10-nm node, by means of device and basic circuit simulations. The comparison is performed in the ultralow voltage regime (below 500 mV), where the proposed III-V TFETs feature ON-current levels comparable to scaled FinFETs, for the same low-operating-power OFF-current. Due to the asymmetrical n- and p-type I-Vs, trends of noise margins and performances are investigated for different Wp/Wn ratios. Implications of the device threshold voltage variability, which turned out to be dramatic for steep slope TFETs, are also addressed.