Concentration Profile Simulation of SiC/Si Heterostructures

Concentration Profile Simulation of SiC/Si Heterostructures

Computer simulation of the concentration profiles evolution in SiC/Si heterostructures during growth and subsequent ion sputtering is presented. Simulation is based on a complex self-consistent approach combining kinetic and ballistic methods. Within the framework of the proposed method concentratio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials Science Forum 2016-05, Vol.858, p.501-504
Hauptverfasser: Kharlamov, V.S., Lubov, Maxim N., Pezoldt, Joerg, Kulikov, Dmitri V., Trushin, Yuri V.
Format: Artikel
Sprache:eng
Schlagworte:
Computer simulation
Evolution
Heterostructures
Mathematical analysis
Secondary ion mass spectrometry
Silicon
Silicon carbide
Sputtering
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Computer simulation of the concentration profiles evolution in SiC/Si heterostructures during growth and subsequent ion sputtering is presented. Simulation is based on a complex self-consistent approach combining kinetic and ballistic methods. Within the framework of the proposed method concentration depth profiles in SiC/Si heterostructure with pre-deposited Ge impurity are calculated and compared with experimental sputtering profiles obtained by secondary ion mass spectrometry.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.501