High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

In this study, the application of atmospheric pressure thermal plasma jet (TPJ) annealing for impurity activation in 4H–SiC is reported. The activation of phosphorus atoms implanted at 300°C in 4H–SiC by TPJ irradiation and analysis of its crystallinity are investigated. At the maximum annealing temperature of 1630°C, the minimum resistivity value is 3.1 mΩ·cm and the maximum carrier concentration value is 2.0 × 1020 cm−3. Orientation analysis suggests that the sample implanted at 300°C was recrystallized to a 4H–SiC(0001) structure after 1630°C annealing. Furthermore, a significant increase in the carrier concentration was observed with the increasing cooling rate during the activation annealing process. Rapid cooling may suppress the impurity deactivation. These results suggest that short-time high-temperature TPJ irradiation annealing is effective for P dopant activation in 4H–SiC.