Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique

Near-ideal In: ZnO/p-Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by spray pyrolysis method of (Zn (CH 3 COO) 2 ·2H 2 O) at different indium doping concentrations on monocrystalline p-type silicon. The experimental data of the conduction band offset ∆ E c and valence band offset ∆ E c were compared with theoretical values. The band offset ∆ E c = 0.45 eV and ∆ E v = 1.65 eV obtained at 300 K. The energy band diagram of In: ZnO/p-Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C −2 –V plot.