Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating
A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in...
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| Veröffentlicht in: | Rare metals 2016-07, Vol.35 (7), p.520-525 |
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| creator | Qiu, Wan-Qi Liu, Zhong-Wu Zhou, Ke-Song |
| description | A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature. |
| doi_str_mv | 10.1007/s12598-015-0506-5 |
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The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature.</description><identifier>ISSN: 1001-0521</identifier><identifier>EISSN: 1867-7185</identifier><identifier>DOI: 10.1007/s12598-015-0506-5</identifier><language>eng</language><publisher>Beijing: Nonferrous Metals Society of China</publisher><subject>AlN薄膜 ; Aluminum ; Aluminum nitride ; Aluminum oxide ; Arc deposition ; Biomaterials ; Chemical vapor deposition ; Chemistry and Materials Science ; Deposition ; Depth profiling ; Electrons ; Energy ; Glass substrates ; Ion plating ; Low temperature ; Materials Engineering ; Materials Science ; Metallic Materials ; Nanoscale Science and Technology ; Nonferrous metals ; Optical properties ; Photoelectrons ; Physical Chemistry ; Plasma ; Plating ; Silica glass ; Silicon substrates ; Stoichiometry ; Wavelengths ; X ray photoelectron spectroscopy ; X射线光电子能谱 ; 低温生长 ; 制备 ; 化学计量比 ; 氮化铝薄膜 ; 磁过滤 ; 阴极电弧离子镀</subject><ispartof>Rare metals, 2016-07, Vol.35 (7), p.520-525</ispartof><rights>The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015</rights><rights>The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-fd11eede83dab5861f7b4fffcfc6d614c4d79fea901552d4763eada57e3e3c253</citedby><cites>FETCH-LOGICAL-c376t-fd11eede83dab5861f7b4fffcfc6d614c4d79fea901552d4763eada57e3e3c253</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85314X/85314X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12598-015-0506-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12598-015-0506-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27915,27916,41479,42548,51310</link.rule.ids></links><search><creatorcontrib>Qiu, Wan-Qi</creatorcontrib><creatorcontrib>Liu, Zhong-Wu</creatorcontrib><creatorcontrib>Zhou, Ke-Song</creatorcontrib><title>Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating</title><title>Rare metals</title><addtitle>Rare Met</addtitle><addtitle>Rare Metals</addtitle><description>A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature.</description><subject>AlN薄膜</subject><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Aluminum oxide</subject><subject>Arc deposition</subject><subject>Biomaterials</subject><subject>Chemical vapor deposition</subject><subject>Chemistry and Materials Science</subject><subject>Deposition</subject><subject>Depth profiling</subject><subject>Electrons</subject><subject>Energy</subject><subject>Glass substrates</subject><subject>Ion plating</subject><subject>Low temperature</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Metallic Materials</subject><subject>Nanoscale Science and Technology</subject><subject>Nonferrous metals</subject><subject>Optical properties</subject><subject>Photoelectrons</subject><subject>Physical Chemistry</subject><subject>Plasma</subject><subject>Plating</subject><subject>Silica glass</subject><subject>Silicon substrates</subject><subject>Stoichiometry</subject><subject>Wavelengths</subject><subject>X ray photoelectron spectroscopy</subject><subject>X射线光电子能谱</subject><subject>低温生长</subject><subject>制备</subject><subject>化学计量比</subject><subject>氮化铝薄膜</subject><subject>磁过滤</subject><subject>阴极电弧离子镀</subject><issn>1001-0521</issn><issn>1867-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kc1u3SAQha2qkZomfYDuULvphpaxDdjLKuqfdKVumjXiwuBLZIMDuFHePlg3qqouugJmzndm0Gmat8A-AmPyU4aWjwNlwCnjTFD-ormEQUgqYeAv650xqJ0WXjWvc75jrO-FYJfN70N8oAWXFZMuW0IypfhQTiQ6kkv05uTjgiV5Q_S8LT5sCwm-vi0S5-clkzXhqhNacnwki54CFm9obRXci0aXU7Q7nQzxMZB11sWH6bq5cHrO-Ob5vGpuv375dfOdHn5--3Hz-UBNJ0WhzgIgWhw6q498EODksXfOGWeEFdCb3srRoR7rv3lreyk61FZziR12puXdVfPh7LumeL9hLmrx2eA864BxywqGlnMAKWWVvv9Hehe3FOp2CuQoBZcj7IZwVpkUc07o1Jr8otOjAqb2JNQ5CVU3UnsSamfaM5OrNkyY_nL-D_TuedAphum-cn8mCTHKTvKx754AJ1iaGw</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Qiu, Wan-Qi</creator><creator>Liu, Zhong-Wu</creator><creator>Zhou, Ke-Song</creator><general>Nonferrous Metals Society of China</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7QF</scope></search><sort><creationdate>20160701</creationdate><title>Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating</title><author>Qiu, Wan-Qi ; Liu, Zhong-Wu ; Zhou, Ke-Song</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-fd11eede83dab5861f7b4fffcfc6d614c4d79fea901552d4763eada57e3e3c253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>AlN薄膜</topic><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Aluminum oxide</topic><topic>Arc deposition</topic><topic>Biomaterials</topic><topic>Chemical vapor deposition</topic><topic>Chemistry and Materials Science</topic><topic>Deposition</topic><topic>Depth profiling</topic><topic>Electrons</topic><topic>Energy</topic><topic>Glass substrates</topic><topic>Ion plating</topic><topic>Low temperature</topic><topic>Materials Engineering</topic><topic>Materials Science</topic><topic>Metallic Materials</topic><topic>Nanoscale Science and Technology</topic><topic>Nonferrous metals</topic><topic>Optical properties</topic><topic>Photoelectrons</topic><topic>Physical Chemistry</topic><topic>Plasma</topic><topic>Plating</topic><topic>Silica glass</topic><topic>Silicon substrates</topic><topic>Stoichiometry</topic><topic>Wavelengths</topic><topic>X ray photoelectron spectroscopy</topic><topic>X射线光电子能谱</topic><topic>低温生长</topic><topic>制备</topic><topic>化学计量比</topic><topic>氮化铝薄膜</topic><topic>磁过滤</topic><topic>阴极电弧离子镀</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Qiu, Wan-Qi</creatorcontrib><creatorcontrib>Liu, Zhong-Wu</creatorcontrib><creatorcontrib>Zhou, Ke-Song</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Aluminium Industry Abstracts</collection><jtitle>Rare metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Qiu, Wan-Qi</au><au>Liu, Zhong-Wu</au><au>Zhou, Ke-Song</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating</atitle><jtitle>Rare metals</jtitle><stitle>Rare Met</stitle><addtitle>Rare Metals</addtitle><date>2016-07-01</date><risdate>2016</risdate><volume>35</volume><issue>7</issue><spage>520</spage><epage>525</epage><pages>520-525</pages><issn>1001-0521</issn><eissn>1867-7185</eissn><abstract>A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature.</abstract><cop>Beijing</cop><pub>Nonferrous Metals Society of China</pub><doi>10.1007/s12598-015-0506-5</doi><tpages>6</tpages></addata></record> |
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| subjects | AlN薄膜 Aluminum Aluminum nitride Aluminum oxide Arc deposition Biomaterials Chemical vapor deposition Chemistry and Materials Science Deposition Depth profiling Electrons Energy Glass substrates Ion plating Low temperature Materials Engineering Materials Science Metallic Materials Nanoscale Science and Technology Nonferrous metals Optical properties Photoelectrons Physical Chemistry Plasma Plating Silica glass Silicon substrates Stoichiometry Wavelengths X ray photoelectron spectroscopy X射线光电子能谱 低温生长 制备 化学计量比 氮化铝薄膜 磁过滤 阴极电弧离子镀 |
| title | Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating |
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