Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating

A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature.