Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Suspended silicon nanowires with narrow ( similar to 10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10 super(5) and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.